? 2008 ixys corporation, all rights reserved ds99882a(4/08) v dss = 1000v i d25 = 15a r ds(on) 430 m t rr 300 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c15a i dm t c = 25 c, pulse width limited by t jm 65 a i ar t c = 25 c13a e as t c = 25 c1j dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 290 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force 20..120/4.5..27 n/lb. weight 5g g = gate d = drain s = source symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 25 a v gs = 0v t j = 125 c 2 ma r ds(on) v gs = 10v, i d = 13a, note 1 430 m features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation ? low drain to tab capacitance(<30pf) ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? fast intrinsic rectifier applications ? switched-mode and resonant-mode power supplies ? dc-dc converters ? laser drivers ? ac and dc motor controls ? robotics and servo controls advantages ? easy assembly ? space savings ? high power density isolated tab isoplus247 (ixfr) e153432 IXFR26N100P polar tm power mosfet hiperfet tm
ixys reserves the right to change limits, test conditions, and dimensions. IXFR26N100P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 13a, note 1 13 22 s c iss 11.9 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 690 pf c rss 60 pf r gi gate input resistance 1.50 t d(on) resistive switching times 45 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 13a 45 ns t d(off) r g = 1 (external) 72 ns t f 50 ns q g(on) 197 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 13a 76 nc q gd 85 nc r thjc 0.43 c /w r thcs 0.15 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 26 a i sm repetitive, pulse width limited by t jm 104 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.2 c i rm 12 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 13a, -di/dt = 100a/ s v r = 100v, v gs = 0v isoplus247 (ixfr) outline
? 2008 ixys corporation, all rights reserved IXFR26N100P fig. 1. output characteristics @ 25oc 0 4 8 12 16 20 24 28 0123456789 v ds - volts i d - amperes v gs = 10v 9v 7v 8v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 7v 8v fig. 3. output characteristics @ 125oc 0 4 8 12 16 20 24 28 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 9v 7v 8v fig. 4. r ds(on) normalized to i d = 13a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 26a i d = 13a fig. 5. r ds(on) normalized to i d = 13a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 5 10 15 20 25 30 35 40 45 50 55 60 65 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFR26N100P ixys ref: f_26n100p(86)3-28-08-b fig. 7. input admittance 0 5 10 15 20 25 30 35 40 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 240 280 q g - nanocoulombs v gs - volts v ds = 500v i d = 13a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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